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PhD Preliminary Oral Exam – Michael Hayes

Deposition and Characterization of Conducting ALD Films and Nanolaminates

Atomic layer deposition (ALD) is a thin film deposition method capable of depositing uniform, high-quality, films of only a few monolayers. Although the method has been around for over 40 years the majority of the films deposited are binary metal oxide thin-films. Due to the purge separated reactions characteristic of ALD these films are the easiest films to grow. In more recent years ALD processes have been developed to deposit monometallic, ternary metal oxide, and nano-laminate thin-films. One particular example is the deposition of Ru using oxygen. Ru has potential as an interconnect material in electronic circuits where low-resistance is needed. While the resistivity as-deposited is low the impact of annealing on the structure and electronic properties of Ru is proposed to be examined to determine if the resistivity of the film can be lowered further without adversely impacting the other properties of the film. CoNiO is another example which in s! ome forms yields a p-type semiconductor. A low-resistivity p-type semiconductor would be useful as a transport layer for transistors, solar cells, and battery electrodes. I propose the deposition of nano-laminate films from separate Co and Ni precursors in various ratios and examining the physical and electronic properties of the resulting film.

Major Advisor: John Conley
Committee: Larry Cheng
Committee: Alan Wang
Committee: David Cann
GCR: Enrique Thomann

Monday, March 9 at 2:00pm to 4:00pm

Kelley Engineering Center, 1005
110 SW Park Terrace, Corvallis, OR 97331

Event Type

Lecture or Presentation

Event Topic

Research

Organization
Electrical Engineering and Computer Science
Contact Name

Calvin Hughes

Contact Email

calvin.hughes@oregonstate.edu

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